JPS6156844B2 - - Google Patents
Info
- Publication number
- JPS6156844B2 JPS6156844B2 JP55144594A JP14459480A JPS6156844B2 JP S6156844 B2 JPS6156844 B2 JP S6156844B2 JP 55144594 A JP55144594 A JP 55144594A JP 14459480 A JP14459480 A JP 14459480A JP S6156844 B2 JPS6156844 B2 JP S6156844B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- firing
- zno
- evaporation
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 36
- 238000010304 firing Methods 0.000 claims description 27
- 239000011787 zinc oxide Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 21
- 230000008020 evaporation Effects 0.000 claims description 21
- 238000001704 evaporation Methods 0.000 claims description 21
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 16
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 238000003746 solid phase reaction Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- AXTYOFUMVKNMLR-UHFFFAOYSA-N dioxobismuth Chemical compound O=[Bi]=O AXTYOFUMVKNMLR-UHFFFAOYSA-N 0.000 claims 1
- 239000011701 zinc Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 13
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910007657 ZnSb Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55144594A JPS5768002A (en) | 1980-10-16 | 1980-10-16 | Method of producing voltage nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55144594A JPS5768002A (en) | 1980-10-16 | 1980-10-16 | Method of producing voltage nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5768002A JPS5768002A (en) | 1982-04-26 |
| JPS6156844B2 true JPS6156844B2 (en]) | 1986-12-04 |
Family
ID=15365690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55144594A Granted JPS5768002A (en) | 1980-10-16 | 1980-10-16 | Method of producing voltage nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768002A (en]) |
-
1980
- 1980-10-16 JP JP55144594A patent/JPS5768002A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5768002A (en) | 1982-04-26 |
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